Analog Devices, Inc.
Heavily doped buried layer to reduce MOSFET off capacitance

Abstract:

A metal-oxide semiconductor field effect transistor (MOSFET) includes a source region and a drain region of a first conductivity type. The MOSFET additionally include a body region of a second conductivity type, where the body region underlies at least a portion of the source region and the drain region. The MOSFET further includes a buried region of the first conductivity type, where the buried region is disposed between the body region and a substrate, where the buried region is configured to reduce a capacitance between the source region and the drain region in response to an indicated voltage applied between the body region and the buried region.