Analog Devices, Inc.
Semiconductor photodetector assembly

Abstract:

Techniques to use energy band gap engineering (or band offset engineering) to produce a photodetector semiconductor assembly that can be tuned to absorb light in one or more wavelengths. For example, the assembly can be tuned to receive infrared (IR) and/or ultraviolet (UV) light. The photodetector assembly can operate as a photodiode, a phototransistor, or can include both a photodiode and a phototransistor.