Analog Devices, Inc.
SILICON CAVITY BACKED RADIATOR STRUCTURE

Abstract:

One embodiment is an apparatus comprising a silicon-on-insulator ("SOI") substrate comprising an insulating layer sandwiched in between a bottom silicon layer and a top silicon layer; a radiating element disposed on a top surface of the SOI substrate; and at least one cavity disposed in the SOI substrate surrounding the radiating element, wherein the at least one cavity extends from a bottom surface of the bottom silicon layer to a bottom surface of the insulating layer.