Wolfspeed, Inc.
Semiconductor Having a Backside Wafer Cavity for Radio Frequency (RF) Passive Device Integration and/or Improved Cooling and Process of Implementing the Same
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Abstract:
A semiconductor device configured for a radio frequency (RF) application and further configured for passive device integration and/or improved cooling includes a substrate; an active region portion arranged on the substrate, the active region portion includes at least one radio frequency (RF) transistor amplifier; a cavity arranged within the substrate; and one or more radio frequency (RF) devices arranged in the cavity.
Status:
Application
Type:
Utility
Filling date:
17 Feb 2020
Issue date:
19 Aug 2021