Wolfspeed, Inc.
SEMICONDUCTOR DIE WITH IMPROVED EDGE TERMINATION

Abstract:

A semiconductor die includes a drift region, an active region in the drift region, and an edge termination region surrounding the active region in the drift region. The drift region has a first doping type. The edge termination region includes a charge compensation region, a number of guard rings, and a counter doping region. The charge compensation region is in the drift region and has a second doping type that is opposite the first doping type. The guard rings are in the charge compensation region, have the second doping type, and a doping concentration that is greater than a doping concentration of the charge compensation region. The counter doping region is in the drift region and overlaps at least a portion of the charge compensation region. The counter doping region has the first doping type.