Wolfspeed, Inc.
GROUP III NITRIDE-BASED RADIO FREQUENCY AMPLIFIERS HAVING BACK SIDE SOURCE, GATE AND/OR DRAIN TERMINALS

Abstract:

RF amplifiers are provided that include an interconnection structure and a Group III nitride-based RF amplifier die that is mounted on top of the interconnection structure. The Group III nitride-based RF amplifier die includes a semiconductor layer structure. A plurality of unit cell transistors are provided in an upper portion of the semiconductor layer structure, and a gate terminal, a drain terminal and a source terminal are provided on a lower surface of the semiconductor layer structure that is adjacent the interconnection structure.