Wolfspeed, Inc.
INTERFACE LAYER CONTROL METHODS FOR SEMICONDUCTOR POWER DEVICES AND SEMICONDUCTOR DEVICES FORMED THEREOF

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Abstract:

A semiconductor device includes a semiconductor layer structure, a gate insulating pattern on the semiconductor layer structure, a gate electrode on the gate insulating pattern, and an interface layer between the gate insulating pattern and the semiconductor layer structure, the interface layer having a first segment and a second segment with a gap therebetween.

Status:
Application
Type:

Utility

Filling date:

22 Apr 2020

Issue date:

28 Oct 2021