Wolfspeed, Inc.
INTERFACE LAYER CONTROL METHODS FOR SEMICONDUCTOR POWER DEVICES AND SEMICONDUCTOR DEVICES FORMED THEREOF
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Abstract:
A semiconductor device includes a semiconductor layer structure, a gate insulating pattern on the semiconductor layer structure, a gate electrode on the gate insulating pattern, and an interface layer between the gate insulating pattern and the semiconductor layer structure, the interface layer having a first segment and a second segment with a gap therebetween.
Status:
Application
Type:
Utility
Filling date:
22 Apr 2020
Issue date:
28 Oct 2021