Wolfspeed, Inc.
Group III-Nitride High-Electron Mobility Transistors Configured with Recessed Source and/or Drain Contacts for Reduced On State Resistance and Process for Implementing the Same

Abstract:

A high-electron mobility transistor (HEMT) that includes a substrate, a group III-Nitride channel layer on the substrate, a group III-Nitride barrier layer on the group III-Nitride channel layer, the group III-Nitride barrier layer that includes a higher bandgap than a bandgap of the group III-Nitride channel layer, a source electrically coupled to the group III-Nitride barrier layer, a gate electrically coupled to the group III-Nitride barrier layer, and a drain electrically coupled to the group III-Nitride barrier layer. The source and/or the drain are structured and arranged to extend through the group III-Nitride barrier layer into the group III-Nitride channel layer.