Wolfspeed, Inc.
CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES

Abstract:

Contact structures for semiconductor devices are disclosed. Contact structures that include a metal layer and a substrate of a semiconductor device may be annealed to provide suitable contact resistance. Localized annealed regions may be formed in a pattern within the contact structure to provide a desired contact resistance while reducing exposure of other portions of the semiconductor device to anneal conditions. The annealed regions may be formed in patterns that reduce intersections between annealed regions and fracture planes of the substrate, thereby improving mechanical robustness of the semiconductor device. The patterns may include annealed regions formed in lines that are nonparallel with fracture planes of the substrate. The patterns may also include annealed regions formed in lines that are nonparallel with peripheral edges of the substrate.