Wolfspeed, Inc.
Semiconductor device with improved insulated gate

Abstract:

A semiconductor device includes a semiconductor body and an insulated gate contact on a surface of the semiconductor body over an active channel in the semiconductor device. The insulated gate contact includes a channel mobility enhancement layer on the surface of the semiconductor body, a diffusion barrier layer over the channel mobility enhancement layer, and a dielectric layer over the diffusion barrier layer. By using the channel mobility enhancement layer in the insulated gate contact, the mobility of the semiconductor device is improved. Further, by using the diffusion barrier layer, the integrity of the gate oxide is retained, resulting in a robust semiconductor device with a low on-state resistance.