Wolfspeed, Inc.
Methods and apparatuses related to shaping wafers fabricated by ion implantation

Abstract:

The wafer fabrication technique uses an ion implantation process on the back side of the wafer to control the shape of the wafer. At least one first dopant is implanted into a front side of a wafer to dope the wafer. At least one second dopant is implanted into a back side of the wafer in a dopant profile to create a back side structure, where the back side structure controls a shape of the wafer. A blank wafer is provided that has an undoped front side and a form shaping back side structure on the back side. A doped wafer is provided that has a dopant implanted on the front side and a form shaping back side structure on the back side that least partially offsets the strain in the wafer induced by the front side dopant.