Wolfspeed, Inc.
Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same

Abstract:

The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer, and a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided. The p-type material layer is provided in one of the following: the SiC substrate layer and a first layer arranged on the SiC substrate layer. A method of making the high-electron mobility transistor is also disclosed.