Wolfspeed, Inc.
HIGH ELECTRON MOBILITY TRANSISTORS HAVING IMPROVED CONTACT SPACING AND/OR IMPROVED CONTACT VIAS

Abstract:

A high electron mobility transistor (HEMT) includes a substrate comprising a first surface and a second surface on opposing sides of the substrate, a channel layer on the first surface of the substrate opposite the substrate, a barrier layer on the channel layer, a source contact comprising a first ohmic contact on an upper surface of the barrier layer, and a via extending from the second surface of the substrate to the first ohmic contact.