Wolfspeed, Inc.
HIGH ELECTRON MOBILITY TRANSISTORS AND POWER AMPLIFIERS INCLUDING SAID TRANSISTORS HAVING IMPROVED PERFORMANCE AND RELIABILITY

Abstract:

A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1 DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.