Wolfspeed, Inc.
Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods

Abstract:

Semiconductor devices include a silicon carbide drift region having an upper portion and a lower portion. A first contact is on the upper portion of the drift region and a second contact is on the lower portion of the drift region. The drift region includes a superjunction structure that includes a p-n junction that is formed at an angle of between 10.degree. and 30.degree. from a plane that is normal to a top surface of the drift region. The p-n junction extends within +/-1.5.degree. of a crystallographic axis of the silicon carbide material forming the drift region.