Maxim Integrated Products, Inc.
Self-aligned, dual-gate LDMOS transistors and associated methods

Abstract:

A dual-gate, self-aligned lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor includes a silicon semiconductor structure, a lateral gate including a first dielectric layer and a first conductive layer stacked on the silicon semiconductor structure in a thickness direction, and a vertical gate. The vertical gate includes a second dielectric layer and a second conductive layer disposed in a trench of the silicon semiconductor structure, the second dielectric layer defining an edge of the lateral gate in a lateral direction. A method for forming a dual-gate, self-aligned LDMOS transistor includes (a) forming a vertical gate of the LDMOS transistor in a trench of a silicon semiconductor structure and (b) defining a lateral edge of a lateral gate of the LDMOS transistor using the vertical gate.