Skyworks Solutions, Inc.
Backside metalization with through-wafer-via processing to allow use of high q bondwire inductances

Abstract:

A flip-chip integrated circuit die includes a front side including active circuitry formed therein and a plurality of bond pads in electrical communication with the active circuitry, at least two through-wafer vias extending at least partially though the die and having portions at a rear side of the die, and a bond wire external to the die and electrically coupling the portions of the at least two through-wafer vias at the rear side of the die.