Skyworks Solutions, Inc.
SEMICONDUCTOR-ON-INSULATOR TRANSISTOR LAYOUT FOR RADIO FREQUENCY POWER AMPLIFIERS

Last updated:

Abstract:

A semiconductor-on-insulator die includes a substrate layer, an active layer, an insulator layer between the substrate layer and the active layer, a first metal layer, and a first via layer between the active layer and the first metal layer. The die includes at least one contact pad and a transistor including a first terminal formed within the active layer. A conduction path can include a plurality of first conduction path portions extending between the first terminal and the at least one contact pad and residing within a footprint of the at least one contact pad.

Status:
Application
Type:

Utility

Filling date:

30 Dec 2020

Issue date:

8 Jul 2021