Skyworks Solutions, Inc.
SEMICONDUCTOR-ON-INSULATOR TRANSISTOR LAYOUT FOR RADIO FREQUENCY POWER AMPLIFIERS
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Abstract:
A semiconductor-on-insulator die includes a substrate layer, an active layer, an insulator layer between the substrate layer and the active layer, a first metal layer, and a first via layer between the active layer and the first metal layer. The die includes at least one contact pad and a transistor including a first terminal formed within the active layer. A conduction path can include a plurality of first conduction path portions extending between the first terminal and the at least one contact pad and residing within a footprint of the at least one contact pad.
Status:
Application
Type:
Utility
Filling date:
30 Dec 2020
Issue date:
8 Jul 2021