Skyworks Solutions, Inc.
RADIO-FREQUENCY ISOLATION USING BACKSIDE CAVITIES

Abstract:

A method for fabricating a semiconductor device involves providing a transistor device formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate, applying an interface material below to at least a portion of the oxide layer, removing a portion of the interface material to form a trench, and at least partially covering the interface material and the trench with a substrate layer to form a cavity