Rambus Inc.
Domain-distributed cryogenic signaling amplifier

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Abstract:

A signal amplifier is distributed between first and second IC devices and includes a low-power input stage disposed within the first IC device, a bias-current source disposed within the second IC device and an output stage disposed within the second IC device. The output stage includes a resistance disposed within the second IC device and having a first terminal coupled to a drain terminal of a transistor within the input stage via a first signaling line that extends between the first and second IC devices.

Status:
Grant
Type:

Utility

Filling date:

2 Dec 2019

Issue date:

12 Jan 2021