Texas Instruments Incorporated
ESD protection charge pump active clamp for low-leakage applications
Last updated:
Abstract:
Disclosed examples include an electrostatic discharge protection circuit including a shunt transistor coupled between first and second power supply nodes, a sensing circuit to deliver a control voltage signal to turn on the shunt transistor in response to a detected change in a voltage of the first power supply node resulting from an ESD stress event, and a charge pump circuit to boost the control voltage signal in response to the control voltage signal turning the shunt transistor on.
Status:
Grant
Type:
Utility
Filling date:
15 Jul 2019
Issue date:
7 Sep 2021