Texas Instruments Incorporated
Transistor with integrated capacitor

Last updated:

Abstract:

An electronic device includes a MOS transistor with a source and a drain, and a capacitor with a first plate connected directly to the source, and a second plate connected directly to the drain. A method to fabricate an electronic device includes fabricating a MOS transistor on or in a semiconductor structure, and fabricating a capacitor having a first plate connected directly to a source of the MOS transistor, and a second plate connected directly to a drain of the MOS transistor.

Status:
Grant
Type:

Utility

Filling date:

9 Nov 2018

Issue date:

16 Nov 2021