Texas Instruments Incorporated
Partially disposed gate layer into the trenches

Abstract:

In accordance with some examples, a system comprises a substrate layer having an outer surface. The system also comprises a plurality of trenches extending from the outer surface into the substrate layer. The system then comprises a plurality of active regions with each active region positioned between a different pair of consecutive trenches of the plurality of trenches. The system also comprises a dielectric layer disposed in each of the plurality of trenches and on each of the plurality of active regions. The system then comprises a gate layer disposed on the dielectric layer and extending at least partially into each of the plurality of trenches.