Texas Instruments Incorporated
Method for stripping one or more layers from a semiconductor wafer

Last updated:

Abstract:

A method of forming an integrated circuit includes forming a first layer having a first material type over a first side of a semiconductor wafer. A second layer having a second different material type is removed from a second opposing side of the semiconductor wafer using a first process that removes the second material type at a greater rate than the first material type. Subsequent to removing the second layer, the first layer is removed using a second different process.

Status:
Grant
Type:

Utility

Filling date:

27 Aug 2019

Issue date:

21 Dec 2021