Texas Instruments Incorporated
High voltage isolation structure and method
Last updated:
Abstract:
Described examples include a microelectronic device with a high voltage capacitor that includes a high voltage node, a low voltage node, a first dielectric disposed between the low voltage node and the high voltage node, a first conductive plate disposed between the first dielectric and the high voltage node, and a second dielectric disposed between the first conductive plate and the high voltage node.
Status:
Grant
Type:
Utility
Filling date:
29 Dec 2017
Issue date:
11 Jan 2022