Texas Instruments Incorporated
High voltage isolation structure and method

Last updated:

Abstract:

Described examples include a microelectronic device with a high voltage capacitor that includes a high voltage node, a low voltage node, a first dielectric disposed between the low voltage node and the high voltage node, a first conductive plate disposed between the first dielectric and the high voltage node, and a second dielectric disposed between the first conductive plate and the high voltage node.

Status:
Grant
Type:

Utility

Filling date:

29 Dec 2017

Issue date:

11 Jan 2022