Texas Instruments Incorporated
FIN FIELD EFFECT TRANSISTOR WITH FIELD PLATING

Abstract:

An integrated circuit (IC) having a fin field effect transistor (FinFET) includes a substrate with a fin extending from a surface of the substrate. The fin includes a source region, a drain region, a drift region, and field plating oxide layer. The drift region is adjacent the drain region. The field plating oxide layer is on a first side, a second side, and a third side of the drift region.