Texas Instruments Incorporated
FIN-BASED LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

Abstract:

In some implementations, a method includes forming first and second fins on a semiconductor substrate. The method further includes diffusing first and second implants into the semiconductor substrate and first and second fins. The method also includes patterning a field plate on the semiconductor substrate. An active device, such as a laterally-diffused metal-oxide semiconductor field effect (LDMOS) transistor can be formed in this way.