Texas Instruments Incorporated
NITRIDE-BASED SEMICONDUCTOR LAYER SHARING BETWEEN TRANSISTORS
Last updated:
Abstract:
A semiconductor structure includes a first transistor including a gate structure, a drain, and a source. The gate structure of the first transistor includes a nitride-based semiconductor layer. The semiconductor structure further includes a second transistor including a gate structure, a drain, and a source. The gate structure of the second transistor also includes a nitride-based semiconductor layer. The nitride-based semiconductor layer of the first transistor's gate structure is continuous with the nitride-based semiconductor layer of the second transistor's gate structure.
Status:
Application
Type:
Utility
Filling date:
8 Dec 2020
Issue date:
9 Jun 2022