Texas Instruments Incorporated
NITRIDE-BASED SEMICONDUCTOR LAYER SHARING BETWEEN TRANSISTORS

Last updated:

Abstract:

A semiconductor structure includes a first transistor including a gate structure, a drain, and a source. The gate structure of the first transistor includes a nitride-based semiconductor layer. The semiconductor structure further includes a second transistor including a gate structure, a drain, and a source. The gate structure of the second transistor also includes a nitride-based semiconductor layer. The nitride-based semiconductor layer of the first transistor's gate structure is continuous with the nitride-based semiconductor layer of the second transistor's gate structure.

Status:
Application
Type:

Utility

Filling date:

8 Dec 2020

Issue date:

9 Jun 2022