Texas Instruments Incorporated
Optical sensor with trench etched through dielectric over silicon

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Abstract:

In described examples an integrated circuit (IC) has multiple layers of dielectric material overlying at least a portion of a surface of a substrate. A trench is etched through the layers of dielectric material to expose a portion the substrate to form a trench floor, the trench being surrounded by a trench wall formed by the layers of dielectric material. A metal perimeter band surrounds the trench adjacent the trench wall, the perimeter band being embedded in one of the layers of the dielectric material.

Status:
Grant
Type:

Utility

Filling date:

17 Dec 2019

Issue date:

12 Jul 2022