Texas Instruments Incorporated
INTEGRATED GUARD STRUCTURE FOR CONTROLLING CONDUCTIVITY MODULATION IN DIODES

Abstract:

A microelectronic device includes an integrated guard structure diode on the substrate. The integrated guard structure diode includes a first terminal of the diode, a second terminal of the diode, and a guard structure. The guard structure is between the first terminal of the diode and the second terminal of the diode. The first terminal of the diode and guard structure are electrically connected to each other. An optional switching element may provide selective electrical connection between the first terminal of the diode and the guard structure. Adding a guard structure electrically connected first terminal of the diode, with the guard structure between the first terminal of the diode and the second terminal of the diode provides higher break down voltage than a diode without a guard structure.