Texas Instruments Incorporated
Technique for GaN Epitaxy on Insulating Substrates

Abstract:

A method includes depositing a first epitaxial layer of an aluminum gallium nitride (AlGaN) material onto a preliminary substrate and polishing the first layer's surface. Ions are implanted beneath the surface, which is bonded to a seed insulating substrate. Annealing is performed, resulting in second epitaxial layer on preliminary substrate and third epitaxial layer on seed insulating substrate. Third layer's surface is polished to obtain a seed wafer. In some implementations, a fourth epitaxial layer of a second AlGaN material is deposited onto surface of third layer. Fourth layer's surface is polished, and ions are implanted beneath the surface, which is bonded to a product insulating substrate. Annealing is performed, resulting in fifth epitaxial layer on seed insulating substrate and sixth epitaxial layer on product insulating substrate. The sixth layer can be used to obtain an AlGaN product, and the fifth layer can be reused to fabricate additional AlGaN products.