Texas Instruments Incorporated
THROUGH-GATE CO-IMPLANT SPECIES TO CONTROL DOPANT PROFILE IN TRANSISTORS

Abstract:

In a described example, an integrated circuit (IC) includes a metal oxide semiconductor (MOS) transistor formed in a semiconductor substrate. The transistor includes a gate structure formed over a surface of the substrate and source and drain regions having a first conductivity type formed in the substrate on both sides of the gate structure. A well region having a second opposite conductivity type is between the source and drain regions under the gate structure. The well region includes a well dopant and a through-gate co-implant species. The well dopant and the co-implant species have a retrograde profile extending from the surface of the substrate into the well region.