Texas Instruments Incorporated
PACKAGED ELECTRONIC DEVICE WITH LOW RESISTANCE BACKSIDE CONTACT

Abstract:

In a described example, an electrical apparatus includes: a metal layer formed over a non-device side of a semiconductor device die, the semiconductor device die having devices formed on a device side of the semiconductor device die opposite the non-device side; a first side of the metal layer bonded to a die mount pad on a package substrate; a second side of the metal layer formed over a roughened surface on the non-device side of the semiconductor device die, the roughened surface having an average surface roughness (Ra) between 40 nm and 500 nm; bond pads on the semiconductor device die electrically coupled to conductive leads on the package substrate; and mold compound covering at least a portion of the semiconductor device die and at least a portion of the conductive leads.