Texas Instruments Incorporated
SEMICONDUCTOR DEVICE WITH METAL DIE ATTACH TO SUBSTRATE WITH MULTI-SIZE CAVITY

Abstract:

A semiconductor device includes a metal substrate including a through-hole aperture having a multi-size cavity including a larger area first cavity portion above a smaller area second cavity portion that defines a first ring around the second cavity portion, where the first cavity portion is sized with area dimensions to receive a semiconductor die having a top side with circuitry coupled to bond pads thereon and a back side with a metal (BSM) layer thereon. The semiconductor die is mounted top side up with the BSM layer on the first ring. A metal die attach layer directly contacts the BSM layer, sidewalls of the bottom cavity portion, and a bottom side of the metal substrate.