Texas Instruments Incorporated
APPARATUS WITH OVERLAPPING DEEP TRENCH AND SHALLOW TRENCH AND METHOD OF FABRICATING THE SAME WITH LOW DEFECT DENSITY

Abstract:

An integrated circuit includes a semiconductor substrate that has a top surface. A trench is formed within the substrate, and a conductive filler structure fills the trench. An insulator is located between the semiconductor substrate and the conductive filler. The insulator has a top portion with a top surface at the top surface of the substrate, The insulator further has a bottom portion that forms a corner with the top portion and extends from the corner to a bottom of the trench.