Texas Instruments Incorporated
SCHOTTKY DIODE WITH BURIED LAYER REGION

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Abstract:

Described examples include an integrated circuit having a semiconductor substrate having an epitaxial layer located thereon, the epitaxial layer having a surface. The integrated circuit also has a buried layer formed in the semiconductor substrate, the epitaxial layer located between the buried layer and the surface. The integrated circuit also has a Schottky contact and an ohmic contact formed on the surface. The integrated circuit also has a Pdrift region in the epitaxial layer located between the ohmic contact and the Schottky contact.

Status:
Application
Type:

Utility

Filling date:

6 Sep 2019

Issue date:

11 Mar 2021