Texas Instruments Incorporated
Process enhancement using double sided epitaxial on substrate

Abstract:

Disclosed examples include semiconductor devices and fabrication methods to fabricate semiconductor wafers and integrated circuits, including forming a first epitaxial semiconductor layer of a first conductivity type on a first side of a semiconductor substrate of the first conductivity type, forming a nitride or oxide protection layer on a top side of the first epitaxial semiconductor layer, forming a second epitaxial semiconductor layer of the first conductivity type on the second side of the semiconductor substrate, and removing the protection layer from the first epitaxial semiconductor layer. The wafer can be used to fabricate an integrated circuit by forming a plurality of transistors at least partially on the first epitaxial semiconductor layer.