Texas Instruments Incorporated
ESD protection device with breakdown voltage stabilization

Abstract:

An electronic device includes a silicon-on-insulator (SOI) structure, and an electrostatic discharge (ESD) protection device, with an isolation layer having a thickness and extending in a trench from a first implanted region. The ESD protection device includes a conductive field plate that extends over a portion of the first implanted region and past the first implanted region and over a portion of the isolation layer by an overlap distance that is 3.5 to 5.0 times the thickness of the isolation layer. In one example, the ESD protection device has a finger or racetrack shape, and the first implanted region and a second implanted region extend around first and second turn portions of the finger shape.