Texas Instruments Incorporated
Trimmable silicon-based thermistor with reduced stress dependence
Last updated:
Abstract:
Various examples provide an electronic device that includes first and second resistor segments. Each of the resistor segments has a respective doped resistive region formed in a semiconductor substrate. The resistor segments are connected between first and second terminals. The first resistor segment is configured to conduct a current in a first direction, and the second resistor segment is configured to conduct the current in a second different direction. The directions may be orthogonal crystallographic directions of the semiconductor substrate.
Status:
Grant
Type:
Utility
Filling date:
9 Oct 2019
Issue date:
11 May 2021