Texas Instruments Incorporated
Trimmable silicon-based thermistor with reduced stress dependence

Last updated:

Abstract:

Various examples provide an electronic device that includes first and second resistor segments. Each of the resistor segments has a respective doped resistive region formed in a semiconductor substrate. The resistor segments are connected between first and second terminals. The first resistor segment is configured to conduct a current in a first direction, and the second resistor segment is configured to conduct the current in a second different direction. The directions may be orthogonal crystallographic directions of the semiconductor substrate.

Status:
Grant
Type:

Utility

Filling date:

9 Oct 2019

Issue date:

11 May 2021