Texas Instruments Incorporated
Electrostatic discharge guard ring with complementary drain extended devices
Last updated:
Abstract:
An electrostatic discharge (ESD) protection structure that provides snapback protections to one or more high voltage circuit components. The ESD protection structure can be integrated along a peripheral region of a high voltage circuit, such as a high side gate driver of a driver circuit. The ESD protection structure includes a p-channel device and an n-channel device. The p-channel device includes an n-type barrier region circumscribing a p-type drain region with an n-type body region. The p-channel device may be positioned adjacent to the n-channel device and a high voltage junction diode.
Status:
Grant
Type:
Utility
Filling date:
23 Oct 2017
Issue date:
16 Mar 2021