Analog Devices, Inc.
GALLIUM NITRIDE ENHANCEMENT MODE DEVICE

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Abstract:

An enhancement mode compound semiconductor field-effect transistor (FET) includes a source, a drain, and a gate located therebetween. The transistor further includes a first gallium nitride-based hetero-interface located under the gate and a buried region, located under the first hetero-interface, the buried p-type region configured to determine an enhancement mode FET turn-on threshold voltage to permit current flow between the source and the drain.

Status:
Application
Type:

Utility

Filling date:

11 Sep 2019

Issue date:

24 Mar 2022