Applied Materials, Inc.
MAGNETIC MEMORY AND METHOD OF FABRICATION

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Abstract:

A method of etching a layer stack. The method may include providing a substrate in a process chamber, the substrate comprising an array of patterned features, arranged within a layer stack, the layer stack including at least one metal layer, and directing an ion beam to the substrate from an ion source, wherein the ion beam causes a physical sputtering of the at least one metal layer. The method may include directing a neutral reactive gas directly to the substrate, separately from the ion source, wherein the neutral reactive gas reacts with metallic species generated by the physical sputtering of the at least one metal layer.

Status:
Application
Type:

Utility

Filling date:

24 Jan 2020

Issue date:

29 Jul 2021