Applied Materials, Inc.
3D-NAND Memory Cell Structure

Abstract:

Memory devices and methods of manufacturing memory devices are provided. The device and methods described suppress oxidation of metal layers exposed to ambient oxygen. After an opening is formed, a nitridation process occurs to nitridate the surface of the exposed metal layer inside the opening. The nitridated region formed on the surface of metal layer inside the opening works as a barrier layer for oxygen diffusion. In addition, the nitridated region works as an electrode for charge trap memory cells.