Applied Materials, Inc.
STRUCTURE & MATERIAL ENGINEERING METHODS FOR OPTOELECTRONIC DEVICES SIGNAL TO NOISE RATIO ENHANCEMENT

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Abstract:

A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.

Status:
Application
Type:

Utility

Filling date:

21 Feb 2020

Issue date:

26 Aug 2021