Applied Materials, Inc.
LARGE-AREA VHF PECVD CHAMBER FOR LOW-DAMAGE AND HIGH-THROUGHPUT PLASMA PROCESSING

Abstract:

Embodiments disclosed herein generally relate to a plasma processing system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber which includes at least one VHF power generator coupled to a diffuser within the plasma processing chamber. The feeding location offset of each VHF power generator and the controlling of each VHF power generator via phase modulation and sweeping allows for plasma uniformity improvements by compensating for the non-uniformity of the thin film patterns produced by the chamber, due to the standing wave effect. The power distribution between the multiple VHF power generators coupled to and/or disposed at different locations on the backing plate may be produced by dynamic phase modulation between the VHF power applied at the different coupling points.