Applied Materials, Inc.
STACK FOR 3D-NAND MEMORY CELL
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Abstract:
Memory devices and methods of manufacturing memory devices are provided. A plasma enhanced chemical vapor deposition (PECVD) method to form a memory cell film stack having more than 50 layers as an alternative for 3D-NAND cells is described. The memory stack comprises alternating layers of a first material layer and a second material layer.
Status:
Application
Type:
Utility
Filling date:
6 Apr 2021
Issue date:
21 Oct 2021