Applied Materials, Inc.
CRESTED BARRIER DEVICE AND SYNAPTIC ELEMENT

Abstract:

A crested barrier memory device may include a first electrode, a first self- rectifying layer, and a combined barrier and active layer. The first self-rectifying layer may be between the first electrode and the active layer. A conduction band offset between the first self-rectifying layer and the combined barrier and active layer may be greater than approximately 1.5 eV. A valence band offset between the first self-rectifying layer and the combined barrier and active layer may be less than approximately -0.5 eV. The device may also include a second electrode. The active layer may be between the first self-rectifying layer and the second electrode.