Applied Materials, Inc.
3D-NAND mold

Abstract:

Methods of manufacturing memory devices are provided. The methods decrease the thickness of the first layers and increase the thickness of the second layers. Semiconductor devices are described having a film stack comprising alternating nitride and second layers in a first portion of the device, the alternating nitride and second layers of the film stack having a nitride:oxide thickness ratio (N.sub.f:O.sub.f); and a memory stack comprising alternating word line and second layers in a second portion of the device, the alternating word line and second layers of the memory stack having a word line:oxide thickness ratio (W.sub.m:O.sub.m), wherein 0.1(W.sub.m:O.sub.m)<N.sub.f:O.sub.f<0.95(W.sub.m:O.sub.m).