Applied Materials, Inc.
Method of forming a bottom isolation dielectric by directional sputtering of a capping layer over a pair of stacks

Abstract:

Method of forming an electronic device with a bottom isolation dielectric between a pair of gate stacks is described. Each of the gate stacks comprises a plurality of gate layers. A sacrificial film having a liner on a top and side thereof is on top of the gate layers. A capping layer is on the top of the liner.