Applied Materials, Inc.
Sequential deposition and high frequency plasma treatment of deposited film on patterned and un-patterned substrates

Abstract:

Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm.sup.2 or greater, approximately 10 W/cm.sup.2 or greater, or approximately 20 W/cm.sup.2 or greater.